Micro inertia sensor and method of manufacturing the same
US6789423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Dec 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24322
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.