Method for making an inlayed thyristor-based device
US6790713B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 9, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Sep 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A semiconductor device having a thyristor is manufactured and arranged in a manner that reduces or eliminates difficulties commonly experienced in the formation and implementation of such devices. According to an example embodiment of the present invention, a thyristor (e.g., a thin capacitively-coupled thyristor) is formed having some or all of the body of the thyristor formed inlayed in a semiconductor device substrate. A trench is provided in the substrate, and a semiconductor material is formed in the trench. One or more layers of material are formed in the trench and used to form a portion of a body of the thyristor. The thyristor is formed having adjacent regions of different polarity, wherein at least one of the adjacent regions includes a portion of the semiconductor material and at least one of the adjacent regions includes a portion of the substrate. Once formed, the thyristor is coupled to one or more of a variety of types of semiconductor devices, and can implemented during conventional manufacturing processes, such as CMOS processes. In addition, this trench approach to forming the thyristor improves the ability to isolate the thyristor from other portions of the semic…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.