Semiconductor light emission device and manufacturing method thereof
US6791117B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2003 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Jan 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
Abstract
A semiconductor light emitting device is disclosed, which comprises a substrate, and a multi-layer semiconductor film formed on the substrate, the multi-layer semiconductor film including a plurality of semiconductor layers overlaid on the substrate, the semiconductor layers having a light emission layer for emitting a light, wherein the light is picked up at a first side of the multi-layer semiconductor film, which is a side opposite to the substrate, wherein a pattern having a light pickup surface is formed on a light emitting portion of the multi-layer semiconductor film, the light pickup surface is in a (111) plane or a plane in the vicinity of the (111) plane, and an unevenness is formed on the light pickup surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.