Precision Zener diodes
US6791161B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 8, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Apr 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/25
Abstract
The present invention is directed to a novel semiconductor device, which can be efficiently fabricated for use in Zener diode applications. Precision Zener diodes and the method for manufacturing the same are provided. The Zener diodes of the present invention are made from a semiconductor substrate layer having a range or resistivity, on which is grown an epitaxial layer. The epitaxial layer has a resistivity greater than that of the substrate. The diode also has an interior region of doped semiconductor material of the same conductivity type as the substrate. The interior region extends through the epitaxial layer and into the substrate layer. The diode also has a junction layer of a conductivity type different from the substrate. The junction layer is formed in the epitaxial surface, and the junction layer forms an interior P/N junction with the interior region and a peripheral P/N junction with a peripheral portion of the device. An additional device can optionally be produced in which a low contact resistance layer is implanted into an exterior surface of the junction layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.