Semiconductor device and manufacturing method of the same
US6791195B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 23, 2001 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Aug 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device 3 comprises semiconductor chip 11, Au ball bumps 21 formed on pad electrodes 12 with a stud bump method, and thermoplastic adhesive layer 22 provided on the surface of semiconductor chip 11 on which pad electrodes 12 are formed, in which the tops of Au ball bumps 21 project from the surface of adhesive layer 22. Reliable bonding can be realized by forming the bumps for electrical connection and the adhesive resin having an adhesion function on the semiconductor chip. In addition, the present invention provides a method of bonding a copper foil to a semiconductor wafer to form a wiring pattern, a multi chip module in which electrical connection is established by bumps bonded to each other through an adhesive layer, and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.