Semiconductor device
US6791233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Jan 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2061/006
- WIPO fieldMechanical elements
- WIPO sectorMechanical engineering
Abstract
A flexible area 2 is joined at one end via a thermal insulation area 7 to a semiconductor substrate 3 which becomes a frame and at an opposite end to a moving element 5. The thermal insulation area 7 is made of a thermal insulation material a resin such as polyimide or a fluoridated resin. The flexible area 2 is made up of a thin portion 2S and a thin film 2M different in thermal expansion coefficient. When a diffused resistor 6 formed on the surface of the thin portion 2S is heated, the flexible area 2 is displaced because of the thermal expansion difference between the thin portion 2S and the thin film 2M, and the moving element 5 is displayed with respect to the semiconductor substrate 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.