Photoelectric conversion functional element and production method thereof
US6791257B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2001 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Aug 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro luminescence device comprises a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table. It is produced by providing a substrate having a low dislocation density or a low inclusion density; forming a pn junction by thermally diffusing an element converting the substrate of a first conduction type into the one of a second conduction type from a front surface of the substrate; and forming electrodes on front and rear of the substrate. A diffusion source including an element converting the substrate of a first conduction type into the one of a second conduction type is disposed on the front surface of the substrate, preventing forming of a defect compensating an impurity level which is formed in the substrate by the element during a diffusion process, and gettering impurity on the front surface of the substrate by the diffusion source. Thereby, the conduction type of the Group II-VI compound semiconductor can be controlled and the electro luminescence device having superior light emission characteristics can be stably produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.