LVDS driver in bipolar and MOS technology

US6791377B2 · kind B2 · utility

Assignee

• ALCATEL · FR

Inventors

• Frank Ilchmann · Berlin, DE
• Detlef Rösener · Berlin, DE
• Ralph Ballentin · Birkenwerder, DE

Key dates

• Filing date: May 12, 2003
• Grant date: Sep 14, 2004
• Expiry date: May 12, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03G1/0023
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A circuit arrangement for an LVDS driver, which uses combined bipolar and MOSFET technology with at least two MOSFETs, is shown, wherein a multiplier circuit is connected to an output stage of the LVDS driver and the multiplier circuit is controlled by means of an automatic control circuit, which generates control signals for controlling a current source of the multiplier circuit and for controlling the amplification factor of differential input signals of the multiplier circuit. Advantages of the invention are that it enables said technology, in which semi-conductor components are used in bipolar techniques (e.g. NPN and/or PNP transistors) (as well as MOS technology), to take advantage of the high speed of the bipolar elements compared with MOS elements.