Magnetic field sensor utilizing anomalous hall effect magnetic film
US6791792B2 · kind B2 · utility
36Cited by
8References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 19, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Feb 19, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/18
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetic field sensor for sensing an applied magnetic field by utilizing a Hall effect. Used, as a sensor portion, are compound materials such as FeN showing a significant anomalous Hall effect, and materials containing magnetic properties such as a magnetic semiconductor having a zincblende structure and oxide having a perovskite structure. A device structure of the magnetic field sensor is adopted, in which by providing a current terminal to a film and a voltage terminal thereof respectively in a film thickness direction and in an in-plane direction, the magnetic field can be guided into the in-plane direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.