Tunneling barrier material for a magnetic recording head
US6791806B1 · kind B1 · utility
16Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Nov 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetoresistive stack configured to operate in a current-perpendicular-to-plane mode has a plurality of layers including a barrier layer. The TMR stack has a plurality of layers including a barrier layer, wherein the barrier layer is comprised of an insulating material selected from a group consisting of HfO, HfAlO, ZrO, TiO, TaO or NdO. The TMR stack exhibits a low resistance-area (RA) product, a stable magnetoresistive (MR) ratio, a lower RA product, a higher breakdown voltage of the TMR stack and enhanced thermal stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.