Laser with reduced parasitic etalon effects
US6792010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Dec 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1039
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to the present invention, laser performance is improved by appropriately matching the spectral periods of various etalons within the laser cavity. A first embodiment of the invention is a discretely tunable external cavity semiconductor laser where a grid fixing etalon is present in the laser cavity, the grid fixing etalon free spectral range (FSR) is a whole number multiple of the laser cavity FSR, and the grid fixing etalon FSR is a whole number multiple of the chip etalon FSR. A second embodiment of the invention is a fixed wavelength external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR, and a mode suppressing etalon is inserted into the laser cavity such that the mode suppressing etalon FSR is a whole number multiple of the chip etalon FSR. A third embodiment of the invention is a tunable external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR. A fourth embodiment of the invention is a fixed wavelength external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.