Address conversion device for nonvolatile memory
US6792565B1 · kind B1 · utility
18Cited by
7References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 19, 1999 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Oct 19, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A redundant data for substituting a sector in the second memory region for a damaged sector in the first memory region is stored in the 1088 sector of the flash memory (1), and a program-instruction for rewriting, the redundant data into the table RAM (7) and for writing a program instruction in a specific sector into a program RAM (3) is stored in the 0 sector of the flash memory (1). Because with this arrangement a separate redundant circuit is unnecessary, costs can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.