Method of manufacturing a magnetoresistive element substructure
US6792670B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2001 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Jun 1, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for manufacturing a magnetoresistive device substructure. The substructure includes: a TMR element; a bias field inducing layer that covers the TMR element; and a front flux probe layer formed on the bias field inducing layer and introducing a signal flux to the TMR element. In the manufacturing method, the TMR element and a dummy element are first formed. The dummy element has a shape similar to the TMR element and located in a specific position with respect to the TMR element. Next, the bias field inducing layer is formed on the TMR element in a specific position referring to the position of the dummy element. At the same time, a dummy bias field inducing layer is formed in a position located off the dummy element. Next, the front flux probe layer and a dummy front flux probe layer are formed at the same time on the bias field inducing layer and the dummy element, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.