Puddle etching method of thin film by using spin-processor
US6793836B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Jan 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6708
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a puddle etching method of thin film. In a spin etching equipment, pre-wet the wafer by D.I. water and etch solution to remove the contamination and the upper layer of the film on the wafer. Then spin slowly (about 0-50 rpm) and inject etching solution to form a puddle of etching solution which will stay on the wafer, the wafer then keep spin slowly (about 0-50 rpm) such that the puddle of etching solution stay on the wafer and etching is going on by puddle etching. After the thin film is etched, the wafer is spin at higher speed, and D.I. water is injected to rinse. Then, IPA is used to remove the D.I. water by Marangoni effect. Finally raise the speed to dry the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.