Method for reducing dark current in image sensor
US6794215B2 · kind B2 · utility
30Cited by
11References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2000 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Feb 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A method for fabricating a CMOS image sensor having a characteristic of a reduced dark current includes the steps of: a) providing a semiconductor structure, wherein the semiconductor structure includes a photodiode and peripheral elements formed on a semiconductor substrate; b) forming an insulating layer on the semiconductor structure; c) forming a hydrogen containing dielectric layer on the insulting layer; d) diffusing hydrogen ions contained in the hydrogen containing dielectric layer into a surface of the photodiode, thereby removing a dangling bond; and e) removing the hydrogen containing dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.