Organic thin-film semiconductor element and manufacturing method for the same
US6794220B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Sep 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a polymer material and a manufacturing method for the same. The organic semiconductor device, includes a drain electrode; a source electrode; a gate electrode; a channel that is made of an organic semiconductor material and is disposed between the drain electrode and the source electrode; and an insulation film that is disposed between the gate electrode and the channel; wherein the insulation film is formed under an atmospheric pressure environment by employing a plasma processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.