Methods of forming quantum dots of Group IV semiconductor materials
US6794265B2 · kind B2 · utility
91Cited by
147References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Aug 20, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a method of forming a quantum dot. A particle that includes a semiconductor material Y selected from the group consisting of Si and Ge is provided. Sound energy and light energy is applied to the particle to form a quantum dot. The quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent. The quantum dot includes a core, and the core includes Y.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.