Wafer thinning using magnetic mirror plasma
US6794272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2003 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Mar 18, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.