Process for fabricating a metal wiring and metal contact in a semicondutor device
US6794286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2000 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Apr 26, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.