Ultrathin oxide films on semiconductors
US6794315B1 · kind B1 · utility
43Cited by
9References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2003 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Mar 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr4(OPrn)16 to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.