Semiconductor device, method for manufacturing the same, and radiation detector
US6794682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Mar 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
Abstract
In a semiconductor device including bottom-gate-type thin-film transistors, each of which includes a gate electrode provided on an insulating surface of a substrate, a semiconductor layer provided on the gate electrode via a gate insulating layer, a pair of doped semiconductor layers adjacent to the semiconductor layer, and source and drain electrodes consisting of a pair of conductors adjacent to corresponding ones of the pair of doped semiconductor layers, the thickness of portions of the semiconductor layer below the source and drain electrodes is smaller than the thickness of a portion of the semiconductor layer at a gap portion between the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.