Spin valve structures with specular reflection layers
US6795279B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2004 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Jan 9, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3903
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.