Group III nitride compound semiconductor laser and manufacturing method thereof
US6795471B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Apr 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.