Process and device for growing single crystals, especially of CaF2
US6797058B2 · kind B2 · utility
0Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 22, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jan 4, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a process and a device for growing single crystals, especially of CaF2. Within the framework of said process, a stack of crucibles (100, 101, . . . , 106, . . . ) containing the starting material is successively moved translationally through a melting chamber (C1) and an annealing chamber (C2), said movement being continuous, smooth and without interruption. The present invention provides for the preparation of fluoride, single crystals, particularly optical fluoride single crystals and optical UV &lgr;<248 nm lithography element blanks, most preferably CaF2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.