Current carrying structure using voltage switchable dielectric material
US6797145B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Dec 9, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jan 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An electrochemical processing method is provided for forming a current carrying device for semiconductor chip packaging and similar applications. The method comprises selecting sections of a substrate to carry current wherein a selected section is at least partly covered with a voltage switchable dielectric material, rendering the voltage switchable dielectric material conductive, and electrochemically forming a current carrying material directly on the voltage switchable dielectric material. The voltage switchable dielectric material can have a characteristic voltage, such that when a voltage having a magnitude exceeding the characteristic voltage is applied to the voltage switchable dielectric material, the voltage switchable dielectric material switches from a dielectric material to a conductive material. When conductive, the voltage switchable dielectric material is amenable to electrochemical processing such as electroplating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.