Method for forming gas cluster and method for forming thin film
US6797334B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 27, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Aug 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature,the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.