Method for forming thin film with a gas cluster ion beam
US6797339B2 · kind B2 · utility
56Cited by
20References
9Claims
0Family size
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Key dates
| Filing date | Jan 27, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jan 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction.It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.