Semiconductor device-manufacturing method for manufacturing semiconductor devices with improved heat radiating efficiency and similar in size to semiconductor elements
US6797530B2 · kind B2 · utility
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2References
6Claims
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Key dates
| Filing date | Sep 25, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Sep 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device-manufacturing method includes a laminated wafer formation step and a dicing step. In the laminated wafer formation step, a metal plate is first laid on one side of a wafer with a solder material interposed, and then the metal plate and the wafer are subjected to decompression pressing to form a one-piece structure. As a result, a laminated wafer is obtained. In the dicing step, the laminated wafer is diced into laminated chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.