Method of manufacturing semiconductor integrated circuit having capacitor and silicided and non-silicided transistors
US6797554B2 · kind B2 · utility
6Cited by
23References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 21, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Mar 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A method of manufacturing a semiconductor integrated circuit including a silicided and non-silicided MOS transistor together with a capacitor is provided. An insulating film for forming a capacitor insulating film and a conductive material film for forming an upper electrode are formed sequentially. A part of the insulating film is used to form the capacitor insulating film, and another part of the same insulating film is used as a salicide block film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.