Method for forming an epitaxial cobalt silicide layer on MOS devices
US6797598B2 · kind B2 · utility
4Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Aug 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.