Method for depositing a fluorine-doped silica film
US6797649B2 · kind B2 · utility
5Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jul 25, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention concerns a method comprising evaporating silicon and/or SiOx, wherein said evaporating is further defined as occurring in the presenceof oxygen if silicon or SiOx with x less than two is being evaporated, to form a silicon oxide film at the surface of a substrate and in bombarding said silicon film, while it is being formed, with a beam of positive ions derived from both a polyfluorocarbon compound and a rare gas. The invention is useful for producing low-index antiglare films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.