Active matrix organic light-emitting diode and manufacturing method thereof
US6797985B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Aug 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
An active matrix organic light-emitting diode and manufacturing method thereof is provided. A thin film transistor having a gate, a source and a drain is formed over a substrate. An anode layer is formed over the substrate such that the anode layer connects electrically with the source terminal of the thin film transistor. An organic layer is formed to cover the anode layer and the thin film transistor. The organic layer between the source and the drain serves as a channel region of the thin film transistor. A cathode layer is formed over the organic layer. Since the molecules inside the organic layer are aligned in a direction from the source to the drain and perpendicular to a direction from the anode layer to the cathode layer, electron mobility at the channel region is enhanced and the emitting efficiency of the diode is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.