High efficiency light emitting diode and method of making the same
US6797987B2 · kind B2 · utility
64Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 2, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jan 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode with high efficient reflective metal layer is disclosed. To prevent the reflective metal layer from reacting with the epi-LED layer structure during a thermal annealing process, a transparent electrical-conductive oxide layer such as ITO is formed in between them. Four preferred embodiments are proposed to improve the ohmic contact between the ITO layer and the epi-LED layers. There are: forming ohmic contact grid pattern, or ohmic contact channels in the ITO layer, or thin GaAs layer, or thin transparent metal layer at the interface between the ITO and the epi-LED layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.