Light-emitting diode with enhanced light-emitting efficiency
US6797988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
The present invention discloses a light-emitting diode with enhanced light-emitting efficiency, in which the active current is prevented from flowing in the region under the top electrode so that the light-emitting efficiency as well as the brightness can be improved. The light-emitting diode comprises: a substrate; a first electrode formed on the bottom surface of the substrate; an epitaxial LED structure having a pn junction formed on the top surface of the substrate, and a groove formed on the epitaxial LED structure passing through the pn junction such that the epitaxial LED structure is divided into a first epitaxial LED region and a second epitaxial LED region, and the groove having a side light-reflective layer and an insulating layer; a bottom insulating layer formed on the top surface of the first epitaxial LED region; a second electrode formed on the top surface of the bottom insulating layer; and a plurality of extending conductive contacts formed on the top surface of the second epitaxial LED region, each extending conductive contact connected to the second epitaxial LED region through an extending conductive wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.