Apparatus and method for fabricating a high reverse voltage semiconductor device
US6797992B2 · kind B2 · utility
3Cited by
18References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2001 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Aug 7, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a high voltage semiconductor device capable of withstanding excessive breakdown and clamping voltages. The device includes a high resistivity substrate, and an epitaxially grown, low resistivity layer having a stress-relieving dopant. During production, the low conductivity region has one surface that is etched before a high conductivity region is diffused into it or epitaxially deposited on it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.