Reliable adhesion layer interface structure for polymer memory electrode and method of making same
US6798003B2 · kind B2 · utility
10Cited by
4References
22Claims
0Family size
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Key dates
| Filing date | Jul 20, 2001 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jul 20, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/939
Abstract
A polymer memory device includes two organic adhesion layers that facilitate an integral package comprising a lower and an upper electrode and the ferroelectric polymer memory structure. The ferroelectric polymer memory structure includes crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure includes spin-on and/or Langmuir-Blodgett deposited compositions.A memory system allows the polymer memory device to interface with various existing hosts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.