Metal film pattern and manufacturing method thereof
US6798032B2 · kind B2 · utility
4Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Jun 5, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jun 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A SnO2 film having a prescribed pattern feature is formed on a substrate by a wet film-formation technology (e.g., sol-gel method). A Ni film is formed on the SnO2 film by an electroless plating method. The electroless plating method is conducted in the presence of at least one sulfur-containing compound selected from the group consisting of thiosulfates, thiocyanates and sulfur-containing organic compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.