Methods and systems for programmable memory using silicided poly-silicon fuses
US6798684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jan 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to methods and systems for evaluating one-time programmable memory cells. A threshold current is applied to a resistive circuit, thereby generating a threshold voltage. A read current is applied to a first memory cell, thereby generating a memory cell voltage. The memory cell voltage is compared to the threshold voltage, thereby determining the state of the memory cell. In a further embodiment of the invention, a second threshold voltage is generated and compared the memory cell voltage, thereby verifying the state of the memory cell. The threshold current is optionally a substantial replica of said read current. The threshold current is optionally a proportional substantial replica of said read current. In an embodiment, the resistive circuit includes a second memory cell, which can be programmed or unprogrammed. The second memory cell is optionally arranged to average the memory cell resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.