Asymmetric dot shape for increasing select-unselect margin in MRAM devices
US6798691B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory cell and method for improving the write selectivity of memory cells in an MRAM array is provided herein. In particular, the magnetic memory cell may have a magnetic layer with a shape that is substantially asymmetrical about at least one axis of the magnetic layer. Such asymmetry may advantageously reduce and/or eliminate the effects of variations in the fabrication process. In addition, an asymmetrical memory shape may induce a relatively consistent equilibrium vector state, allowing a single switching mechanism to set the magnetic direction of the cell. Furthermore, a method is provided for programming a memory cell, in which the amount of current needed during a writing procedure is advantageously reduced relative to the amount of current needed in conventional writing procedures. In this manner, the asymmetrical memory cell and method produces a storage medium having overall power requirements less than those associated with symmetrical memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.