Memory device having dual power ports and memory system including the same
US6798709B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plurality of internal circuits of a memory device are operable at first and second internal voltages, where the first internal voltage is less than the second internal voltage. A first power port of the memory device receives a first power supply voltage, and a second power port of the memory device receives a second power supply voltage, where the first power supply voltage is less than the second power supply voltage. An internal voltage generation circuit of the memory device is selectively operable in either a first mode in which the second internal voltage is generated from the first power supply voltage, or a second mode in which the second internal voltage is generated from the second power supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.