Wavelength locked integrated optical source structure using multiple microcavity
US6798799B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Aug 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A wavelength-locked, integrated optical signal source structure using a semiconductor laser device is disclosed. The optical source structure has a semiconductor laser formed on a semiconductor substrate, and an etched portion coupled with an output end of the semiconductor laser. The etched portion is configured to pass on a first amount of light beam radiated by the semiconductor laser, and to reflect a second amount of light beam by a given reflection angle. A multiple microcavity is formed in a position spaced apart from the etched portion, and the first amount of light beam is incident upon the multiple microcavity. The optical source structure has a first optical detector for detecting the first amount of light beam passing through the multiple microcavity, and a second optical detector for detecting the second amount of light beam reflected by a slanted, reflecting surface portion of the etched portion. The relative change in the light intensity in the first and second optical detectors is measured out to maintain a constant optical wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.