Hybrid mirror VCSELs
US6798806B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Sep 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
VCSELs having upper mirror structures comprised of a semiconductive top DBR, metal contacts, and a top mirror. The top DBR is thick enough for adequate current spreading, but thin enough, being no more than 3.5 microns, to enable easy fabrication of an isolation region. The top mirror, which is over the top DBR, enhances reflectivity. That top mirror is beneficially comprised of a dielectric material, such as TiO2; TiO2+SiO2 (robust and reliable); TiO2+Al2O3 (good thermal conductivity); or Si+MgO, or of a metal. The top mirror is beneficially formed using a vacuum deposition method, such as e-beam or sputtering. The metal contacts are formed on the top DBR. The VCSELs further include a substrate with an electrical contact, a bottom DBR, a bottom spacer, an active region, and a top spacer. Such VCSELs are particularly beneficial at long wavelengths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.