High power semiconductor laser diode and method for making such a diode
US6798815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jul 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/204
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting of novel design of the ridge waveguide of the laser. Essentially the novel design consists in a segmented ridge waveguide having at least two straight segments, i.e. segments with constant, but different cross sections or widths, and at least one flared segment connecting the two different straight segments. A further improvement can be achieved by combining this approach with a laser diode design termed “unpumped end sections” and described in copending U.S. patent application Ser. No. 09/852,994, entitled “High Power Semiconductor Laser Diode”. Preferable for an advantageous manufacturing process is a segmented ridge waveguide design with three straight segments, at least two of them differing in cross section or width, and two flared segments…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.