Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection
US6800212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Jan 23, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/1215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
One embodiment of the present invention provides a system to facilitate using selective etching to form optical components on a circuit device. The system operates by receiving a substrate composed of a first material including a buffer layer composed of a second material. The system forms a sacrificial layer composed of a third material on the buffer layer. Next, the system forms an optical fiber core composed of a fourth material on the sacrificial layer. After the optical fiber core has been formed, the system performs an etching operation using a selective etchant to remove the sacrificial layer. The system also applies a cladding layer to the optical fiber core.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.