Power switching transistor and method of manufacture for a fluid ejection device
US6800497B2 · kind B2 · utility
9Cited by
14References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Jul 31, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2202/13
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method of manufacturing a power switching transistor for a fluid ejection device includes forming a first conductivity type region and a first diffused region within the first conductivity type region. The first diffused region has a first conductivity type and has a greater impurity concentration than the first conductivity type region. A gate is formed and is defined to have a thin oxide region and a thick oxide region. The thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region and the thin oxide region is at a defined distance from the first diffused region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.