Patent · US Expired

MEMS encapsulated structure and method of making same

US6800503B2 · kind B2 · utility

19Cited by
13References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 20, 2002
Grant dateOct 5, 2004
Priority date
Expiry dateNov 20, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01F2007/068
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning an upper surface of the release material to form another trench, forming a first encapsulating layer that includes sidewalls within the another trench, forming a core layer within the first encapsulating layer, and forming a second encapsulating layer above the core layer, where the second encapsulating layer is connected to the sidewalls of the first encapsulating layer. Alternatively, the method includes forming a multilayer MEMS structure by photomasking processes to form a first metal layer, a second layer including a dielectric layer and a second metal layer, and a third metal layer. The core layer and the encapsulating layers are made of materials with complementary electrical, mechanical and/or magnetic properties.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.