Dual stripe spin valve sensor without antiferromagnetic pinning layer
US6801411B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 1999 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Feb 10, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3903
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A dual-stripe current-pinned spin valve magnetoresistive read sensor includes a first soft ferromagnetic (FM) layer separated from a second soft FM layer by a first spacer layer formed of conductive material. The first spacer layer is also configured to receive a first biasing current for generating a first magnetic field of sufficient strength to saturate the first soft FM layer. The read sensor further includes a third soft FM layer and a fourth soft FM layer separated by a second spacer layer formed of conductive material. The second spacer layer is configured to receive a second biasing current for generating a second magnetic field of sufficient strength to saturate the fourth soft FM layer. An insulation layer also is disposed between the second soft FM layer and the third FM layer. The first and second biasing currents thereby pin magnetizations of the first and fourth soft FM layers, while having a combined negligible effect on magnetizations of substantial portions of the second and third soft ferromagnetic layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.