High repetition rate excimer laser system
US6801562B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Mar 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1055
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a ≧4 kHz repetition rate argon fluoride excimer laser system for producing an UV wavelength 193 nm output. The ≧4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber for producing a 193 nm discharge at a pulse repetition rate ≧4 kHz. The ≧4 kHz repetition rate argon fluoride excimer laser chamber includes magnesium fluoride crystal optic windows for outputting the 193 nm discharge as a ≧4 kHz repetition rate excimer laser 193 nm output with the magnesium fluoride crystal optic windows having a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light a fluence ≧40 mj/cm2/pulse and a 42 mm crystal 120 nm transmission of at least 30%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.