Implantation method
US6802719B2 · kind B2 · utility
24Cited by
10References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 6, 2001 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Sep 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for implanting ions into a surface of a semiconductor structure covered by a layer of insulating material, for example into a trench wall covered by a layer of oxide. A beam of ions is directed at a glancing angle to the layer of insulating material such that a substantial proportion of ions which are implanted into the semiconductor structure surface are scattered from the beam by the layer of insulating material. It is possible therefore to implant ions into a trench wall without requiring a beam source arranged to deliver a beam at a large angle to the trench wall surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.