Paraelectric thin film material and method statement of government interest
US6803134B1 · kind B1 · utility
5Cited by
1References
19Claims
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Key dates
| Filing date | May 31, 2002 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | May 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dielectric thin film material and method of preparation in which precursors are provided to form barium strontium titanate with lanthanum (La) added as a dopant. The precursors and La dopant are mixed with a solvent forming a solution which is deposited on a substrate to form a continuous film composition. In various embodiments, the dielectric thin film has a composition of (1-y)Ba0.6Sr0.4TiO3−(y)La, where y=0 to 10-mol. The thin film material has dielectric and insulating properties suitable for tunable microwave applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.